| 退火工艺对钛酸锶钡薄膜结构的影响 |
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| 引用本文： | 赵莉,杨传仁,冷文建,陈宏伟,符春林,廖家轩,高志强.退火工艺对钛酸锶钡薄膜结构的影响[J].电子元件与材料,2004,23(10):17-19. |
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| 作者姓名： | 赵莉 杨传仁 冷文建 陈宏伟 符春林 廖家轩 高志强 |
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| 作者单位： | 电子科技大学微电子与固体电子学院,四川,成都,610054 |
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| 摘 要： | 采用射频磁控溅射在Pt/Ti/SiO2/Si(100)衬底上制备Ba0.6Sr0.4TiO3(BST)铁电薄膜,在500~750℃之间对薄膜快速退火。XRD分析表明:500℃时BST薄膜开始晶化为ABO3型钙钛矿结构,温度越高结晶越完整,晶粒越大。理论计算表明,薄膜在低温退火后无择优取向,高温退火后在(111)、(210)晶面有择优取向。退火气氛、保温时间、循环次数等因素对薄膜晶粒大小无明显影响,但对表面粗糙度和结晶程度影响较大。
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| 关 键 词： | 无机陶瓷材料 BST薄膜 退火 择优取向 RMS XRD AFM |
| 文章编号： | 1001-2028(2004)10-0017-03 |
Stracture of Ba0.6Sr0.4TiO3 Thin Films Prepared by Sputterring Dependance on Annealing Process |
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| ZHAO Li,YANG Chuan-ren,LENG wen-jian,CHEN Hong-wei,FU Chun-lin,LIAO Jia-xuan,GAO Zhi-qiang.Stracture of Ba0.6Sr0.4TiO3 Thin Films Prepared by Sputterring Dependance on Annealing Process[J].Electronic Components & Materials,2004,23(10):17-19. |
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| Authors: | ZHAO Li YANG Chuan-ren LENG wen-jian CHEN Hong-wei FU Chun-lin LIAO Jia-xuan GAO Zhi-qiang |
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| Abstract: | Ba0.6Sr0.4TiO3 thin film was prepared by RF magnetron sputtering system on Pt/Ti/SiO2/Si(100)substrate. The thin films was annealed from 500℃ to 750℃ by rapid thermal treatment. XRD pattern shows that ABO3 perovskite structure was formed at 500℃ and became more perfect above 550℃. The higher temperature, the better the crystallization and the greater grain size are. The structural coefficient (Ci) and its normalized variance (), which are used to judge the preferred orientation, were calculated. On the contrary, the annealing atmosphere、the retention time and the circulation times do not influence on the grain sizes but influence on the crystallization degree and the average surface roughness. |
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| Keywords: | inorganic ceramic materials BST thin film annealing preferred orientation RMS XRD AFM |
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