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低温烧结微波介质陶瓷
引用本文:赵梅瑜,王依琳.低温烧结微波介质陶瓷[J].电子元件与材料,2002,21(2):30-33,39.
作者姓名:赵梅瑜  王依琳
作者单位:中科院上海硅酸盐研究所,上海,200050
摘    要:在制备多层微波元件过程中,为使用Cu、Ni等低熔点导体,必须降低微波介质陶瓷的烧结温度。本文介绍了通过液相烧结降低致密化温度的BaTi4O9、Ba2Ti9O20及(Zr,Sn)TiO4陶瓷,这类材料的烧结温度已降至1 000℃以下;也介绍了掺加(V2O3+CuO)的BiNbO4基陶瓷,其致密化温度已低至880℃左右。文中还列出了陶瓷组成、低熔点氧化物或玻璃的组成及相关材料的微波介电性能。

关 键 词:低温烧结  微波介质陶瓷  液相烧结
文章编号:1001-2028(2002)02-0030-04

Low Temperature Firing Microwave Dielectric Ceramics
ZHAO Mei-yu,WANG Yi-lin.Low Temperature Firing Microwave Dielectric Ceramics[J].Electronic Components & Materials,2002,21(2):30-33,39.
Authors:ZHAO Mei-yu  WANG Yi-lin
Abstract:In the fabrication of multiplayer microwave devices, low temperature firing microwave dielectric materials are needed in order to use the low-melting point conductors such as Cu and Ni etc. The densification temperature of BaTi4O9, Ba2Ti9O20 and (Zr0.8Sn0.2)TiO4 ceramics could be lowered down to 1000℃ via liquid-phase sintering. Besides, BiNbO4 doped with V2O5 and CuO could be densed at about 880℃. The composition of these materials and low melting glass, as well as the microwave dielectric properties are presented.
Keywords:low temperature firing  microwave dielectrics ceramics  liquid-phase sintering  
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