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Bi_2O_3掺杂对NiCuZn/PZT复合材料电磁性能的影响
引用本文:陈世钗,贾利军,张怀武,罗俊,况佳.Bi_2O_3掺杂对NiCuZn/PZT复合材料电磁性能的影响[J].电子元件与材料,2008,27(10).
作者姓名:陈世钗  贾利军  张怀武  罗俊  况佳
作者单位:电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054
基金项目:国家自然科学基金,科技部国际科技合作计划
摘    要:先采用sol-gel法制得Pb0.95Sr0.05(Zr0.52Ti0.48)O3(PZT)纳米粉料,再采用固相反应法制备NiCuZn/PZT铁氧体/陶瓷复合材料。研究了低温烧结助剂Bi2O3掺杂对复合材料显微结构和电磁性能的影响。当w(Bi2O3)为2.5%时,NiCuZn与PZT的质量比为7:3和6:4的两种复合材料在900℃下均可实现低温烧结,其烧结体密度均大于5g/cm3。其中,7:3的μ′达到27,ε′大于34;6:4的μ′达到16,ε′大于50,均有望制作成不同性能指标的电感、电容双功能材料。

关 键 词:电子技术  NiCuZn/PZT铁氧体/陶瓷  Bi2O3掺杂  低温烧结  电磁性能  显微结构

Effects of Bi_2O_3-doping on the electromagnetic properties of NiCuZn/PZT composite materials
CHEN Shi-chai,JIA Li-jun,ZHANG Huai-wu,LUO Jun,KUANG Jia.Effects of Bi_2O_3-doping on the electromagnetic properties of NiCuZn/PZT composite materials[J].Electronic Components & Materials,2008,27(10).
Authors:CHEN Shi-chai  JIA Li-jun  ZHANG Huai-wu  LUO Jun  KUANG Jia
Affiliation:CHEN Shi-chai,JIA Li-jun,ZHANG Huai-wu,LUO Jun,KUANG Jia (State Key Laboratory of Electronic Thin Film , Integrated Devices,University of Electronic Science , Technology of China,Chengdu 610054,China)
Abstract:Firstly, Pb0.95Sr0.05(Zr0.52Ti0.48)O3 (abbreviated as PZT ) nanopowder was prepared by a sol-gel method. Then NiCuZn/PZT ferrite/ceramic composites were prepared by a solid state reaction method. The effects of Bi2O3-doping as low temperature sintering aid on the microstructures and electromagnetic properties of composites were investigated. As the w(Bi2O3) is 2.5%, composites with mass ratio of NiCuZn to PZT of both 7:3 and 6:4 can realize low temperature sintering at 900 ℃, with the sintered bulk density of greater than 5 g/cm3. μ′ reaches 27 and ε′ is more than 34 for the former, while μ′ reaches 16 and ε′ is more than 50 for the latter. They are expected to be fabricated as inductor and capacitor double functions materials with different performance indexes.
Keywords:electron technology  NiCuZn/PZT ferrite/ceramic  Bi2O3-doping  low temperature sintering  electromagnetic properties  microstructure  
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