溶胶–凝胶法制备ATO-SiO_2抗静电复合薄膜的特性研究

采用两步溶胶–凝胶法制备出 ATO(掺锑氧化锡)-SiO_2复合抗静电薄膜。通过 DTA-TG、XRD、SEM 对 薄膜的结构和形貌进行了表征,结果表明:抗静电复合薄膜表面均匀致密。薄膜中 SiO_2为无定形结构,ATO 的衍射峰 与 SnO_2一致。研究了 SnO_2的含量对薄膜导电性能、结合强度和透过率的影响,发现随 SnO_2含量增加 ?(SnO_2/ SiO_2)从 5 至 12.5,薄膜的表面电阻降低(从 1010ù/□降低到 108ù/□),薄膜的结合强度下降,薄膜的透过率降低(从 89.0%降至 84.2%),结合三方面性能,得出最佳 SnO_2的配比为:?(SnO_2/ SiO_2)=10。

Research on the Characteristics of Antimony Doped Tin Oxide(ATO)- SiO_2 Antistatic Composite Thin Film by Sol-gel

Antistatic ATO- SiO_2 composite thin film was fabricated successfully by two step sol-gel process. The morphology and microstructure were described via DTA-TG ,XRD, SEM. Surface of the thin film was uniform and dense. SiO_2 in the thin film has amorphous structure and the diffractogram of the thin film was the same to SnO_2. The effect of ratio of SnO_2 in the film on conductivity , adhesion and transmittance was investigated too. With the ratio of SnO_2 increasing, surface resistance decreased from 1010ù/□ to 108ù/□, adhesion became poor and transmittance of thin film declined from 89.0% to 84.2%.According to the results above-mentioned, the optimal ratio of SnO_2 was ?(SnO_2/ SiO_2)=10.