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应用于模数转换的高精度带隙基准源
引用本文:朱欢,王向展,张弛,闫小艳.应用于模数转换的高精度带隙基准源[J].电子元件与材料,2012(11):55-58.
作者姓名:朱欢  王向展  张弛  闫小艳
作者单位:电子科技大学电子薄膜与集成器件国家重点实验室;深圳市贝特莱电子科技有限公司
基金项目:中央高校基本科研业务费专项资金资助项目(No.ZYGX2010J040)
摘    要:设计了一种应用于模数转换的高精度带隙基准电压源和电流源电路,利用温度补偿技术,该电路能分别产生零温度系数的基准电压VREF、零温度系数的基准电流IZTAT。仿真结果显示,采用标准0.18μm CMOS工艺,在室温27℃和2.8 V电源电压的条件下,电路工作频率为10 Hz和1 kHz时,电源抑制比(PSRR)分别为–107 dB和–69 dB,VREF及IZTAT的温度系数分别是20.6×10–6/℃和40.3×10–6/℃,功耗为238μW,可在2.4~3.6 V电源电压范围内正常工作。

关 键 词:模数转换  带隙基准源  电源抑制比  温度系数

High precision bandgap reference applied to analog-to-digital conversion
ZHU Huan,WANG Xiangzhan,ZHANG Chi,YAN Xiaoyan.High precision bandgap reference applied to analog-to-digital conversion[J].Electronic Components & Materials,2012(11):55-58.
Authors:ZHU Huan  WANG Xiangzhan  ZHANG Chi  YAN Xiaoyan
Affiliation:1(1.State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science & Technology,Chengdu 610054,China;2.Shenzhen Better Life Electronic Science and Technology Co.,Ltd,Shenzhen 518057,Guangdong Province,China)
Abstract:A high precision bandgap reference voltage and current source circuit which was applied to analog-to-digital conversion was designed.With the help of temperature compensation technology,the circuit respectively produced a zero temperature coefficient reference voltage VREF and current IZTAT.Simulating results show that when the circuit uses a standard 0.18 μm CMOS technology,at room temperature 27 ℃,2.8 V power supply,working frequency are 10 Hz and 1 kHz respectively,the power supply rejection ratios of the circuit are –107 dB and –69 dB,respectively,the temperature coefficients of VREF and IZTAT are 20.6×10–6 / ℃ and 40.3×10–6 /℃,respectively,power consumption is 238 μW,power supply range is 2.4 ~ 3.6 V when normal working.
Keywords:analog-to-digital conversion  bandgap reference  power supply rejection ratio  temperature coefficient
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