| 氧分压对PLD法生长Si(111)基ZnO薄膜性能的影响 |
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| 引用本文： | 何建廷,曹文田.氧分压对PLD法生长Si(111)基ZnO薄膜性能的影响[J].电子元件与材料,2009,28(4). |
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| 作者姓名： | 何建廷 曹文田 |
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| 作者单位： | 1. 山东理工大学,电气与电子工程学院,山东,淄博,255049
2. 山东师范大学,物理与电子科学学院,山东,济南,250014 |
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| 摘 要： | 在不同氧分压下用脉冲激光沉积(PLD)法在n型硅(111)衬底上生长ZnO薄膜。通过对其进行XRD、傅里叶红外吸收(FTIR)和光致发光谱(PL)的测量,研究了氧分压对PLD法制备的ZnO薄膜的结晶质量和发光性质的影响。XRD显示,氧分压为6.50Pa时可以得到结晶质量最佳的ZnO薄膜。PL谱显示,当氧分压由0.13Pa上升至6.50Pa时,位于380nm附近的主发光峰的强度最大。当氧分压进一步上升至13.00Pa时,主发光峰减弱,与氧空位有关的发光峰消失,显示出ZnO薄膜的PL谱和氧分压的大小密切相关。
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| 关 键 词： | ZnO薄膜 PLD 氧分压 发光峰 |
Effects of oxygen partial pressure on the properties of ZnO thin films grown on silicon (111) substrate by pulsed laser deposition |
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| HE Jianting,CAO Wentian.Effects of oxygen partial pressure on the properties of ZnO thin films grown on silicon (111) substrate by pulsed laser deposition[J].Electronic Components & Materials,2009,28(4). |
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| Authors: | HE Jianting CAO Wentian |
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| Affiliation: | 1. School of Electrics and Electronics Engineering;Shandong University of Technology;Zibo 255049;Shandong Province;China;2. School of Physics and Electronics;Shandong Normal University;Jinan 250014;China |
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| Abstract: | ZnO thin films were deposited on n-type Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD) method. X-ray diffraction (XRD), Fourier transform infrared spectrophotometer (FTIR) and photoluminescence (PL) were used to analyze the crystalline and luminescence properties of the ZnO thin films deposited at various oxygen partial pressures. XRD shows that an optimal crystallized ZnO thin film is obtained at the oxygen particl pressure of 6.50 Pa. PL shows that the main emissi... |
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| Keywords: | PLD |
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