| 阵列多台阶稀疏技术 |
| |
| 引用本文： | 李建新.阵列多台阶稀疏技术[J].电子学报,1999,27(3):79-80,78. |
| |
| 作者姓名： | 李建新 |
| |
| 作者单位： | 南京电子技术研究所403室,南京,210013 |
| |
| 摘 要： | 本文探讨了用多个幅度台阶（包括０和１）对阵列进行稀疏的多台阶稀疏技术，与统计密度锥削稀疏技术（幅度仅用０和１）相比，该技术能明显改善稀疏阵天线的副瓣电平，文中用概率方法和最佳一致逼近概念进行了详细阐述，并给出了峰值副瓣电平低于给定值的概率。
|
| 关 键 词： | 稀疏阵 多台阶稀疏技术 稀疏参数 峰值副瓣电平 均值 方差 |
Multistep Sparse Technology in Arrays |
| |
| Li Jianxin.Multistep Sparse Technology in Arrays[J].Acta Electronica Sinica,1999,27(3):79-80,78. |
| |
| Authors: | Li Jianxin |
| |
| Abstract: | The multistep sparse technology (MST) is described in this paper. Using multistep amplitudes (including 0 and 1) the prescribed array can be thinned. Compared with the statistic density tappering technology (only using 0 and 1 ),MST can improve the sidelobe level of the sparse array obviously. Here, with the help of the Probability Theory and the Optimum and Consistent Aproaching Method, MST is presented in details and the probability of the peak sidelobe level less than the given value is given. |
| |
| Keywords: | Sparse array Multistep sparse technology Sparse parameter Peak sidelobe level Average value Variance |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
