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钟控传输门绝热逻辑电路和SRAM的设计
引用本文:汪鹏君,郁军军.钟控传输门绝热逻辑电路和SRAM的设计[J].电子学报,2006,34(2):301-305.
作者姓名:汪鹏君  郁军军
作者单位:宁波大学电路与系统研究所,浙江宁波 315211
基金项目:中国科学院资助项目,浙江省自然科学基金,浙江省留学回国人员基金
摘    要:本文利用NMOS管的自举效应设计了一种新的采用二相无交叠功率时钟的绝热逻辑电路——钟控传输门绝热逻辑电路,实现对输出负载全绝热方式充放电.依此进一步设计了一种新型绝热SRAM,从而可以以全绝热方式有效恢复在字线、写位线、敏感放大线及地址译码器上的大开关电容的电荷.最后,在采用TSMC 0.25 μ m CMOS工艺器件参数情况下,对所设计的绝热SRAM进行HSPCIE模拟,结果表明,此SRAM逻辑功能正确,低功耗特性明显.

关 键 词:钟控传输门绝热逻辑  二相无交叠功率时钟  SRAM设计  低功耗  
文章编号:0372-2112(2006)02-0301-05
收稿时间:2005-02-20
修稿时间:2005-02-202005-10-23

Design of Clocked Transmission Gate Adiabatic Logic Circuit and SRAM
WANG Peng-jun,YU Jun-jun.Design of Clocked Transmission Gate Adiabatic Logic Circuit and SRAM[J].Acta Electronica Sinica,2006,34(2):301-305.
Authors:WANG Peng-jun  YU Jun-jun
Affiliation:Institute of Circuits and Systems,Ningbo University,Ningbo,Zhejiang 315211,China
Abstract:A new adiabatic logic circuit adopting two-phase non-overlap power clocks-Clocked Transmission Gate Adiabatic Logic circuit was designed by using the bootstrap effect of NMOS transistors,so that it could charge or discharge output loads in a fully adiabatic manner.Based on this circuit,a novel adiabatic SRAM was designed.So it could recover the charge of large switching capacitances on word-lines,write bit-lines,sense amplified lines and address decoders in a fully adiabatic manner.Using the parameters of TSMC 0.25 μ m CMOS device,the adiabatic SRAM designed was simulated by HSPICE.The simulation results indicate that this SRAM has correct logic function and the character of clearly low power.
Keywords:clocked transmission gate adiabatic logic  two-phase non-overlap power-clocks  design of SRAM  low power
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