| 硅光电负阻器件的光双稳态瞬态特性 |
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| 引用本文： | 郑元芬,郭维廉,张世林,张培宁,李树荣,郑云光,陈弘达,吴荣汉,林世鸣,芦秀玲.硅光电负阻器件的光双稳态瞬态特性[J].电子学报,2000,28(8):66-68. |
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| 作者姓名： | 郑元芬 郭维廉 张世林 张培宁 李树荣 郑云光 陈弘达 吴荣汉 林世鸣 芦秀玲 |
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| 作者单位： | 1. 天津大学电子信息工程学院,天津 300072;2. 中国科学院半导体研究所,北京 100083 |
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| 基金项目： | 集成光电子学国家重点联合实验室!(中科院半导体所 )开放课题，国家自然科学基金!(No.698962 60 ) |
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| 摘 要： | 在本文中,一方面对电路参数与硅光电负阻器件的光学双稳态开关时间的关系进行了研究,另一方面对器件在低、中、高三个不同输入光强区的光学双稳态响应的变化趋势进行了研究.硅光电负阻器件包括有各种类型,本文主要对"λ"型双极光电负阻晶体管(PLBT)以电阻和光电二极管作为负载的情况进行了讨论.
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| 关 键 词： | 硅光电负阻器件 λ型双极光电负阻晶体管(PLBT) 光双稳开关时间 |
| 收稿时间： | 1999-03-29 |
The Optical Bistability Transient Characteristics of Silicon Optical-electronic Negative Resistance Device |
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| ZHENG Yuan-fen,Guo wei-lian,ZHANG Shi-lin,ZHANG Pei-ning,LI Shu-rong,ZHENG Yun-guang,CHEN Hong-da,WU Rong-han,LIN Shi-ming,LU Xiu-ling.The Optical Bistability Transient Characteristics of Silicon Optical-electronic Negative Resistance Device[J].Acta Electronica Sinica,2000,28(8):66-68. |
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| Authors: | ZHENG Yuan-fen Guo wei-lian ZHANG Shi-lin ZHANG Pei-ning LI Shu-rong ZHENG Yun-guang CHEN Hong-da WU Rong-han LIN Shi-ming LU Xiu-ling |
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| Affiliation: | 1. School of Electronnic Information Engineering,Tianjin University,Tianjin 300072,China;2. Semiconductors Institute,Chinese Academy of Sciences,Bijing 100083,China |
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| Abstract: | In this paper,the relationship of circuit parameters and the optical bistability swithcing time of silicon photo electronic negative resistance device is studied.The varying response to low,medium,high light input intensity regions is also studied.There are many kinds of devices in silicon photo electronic negative resistance device.In this paper,the type of Photo Lambda Bipolar Transistor (PLBT) with resistance load and photo diode load is discussed. |
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| Keywords: | silicon photo electronic negative resistance device photo lambda bipolar transistor (PLBT) the optical bistability switching time |
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