肖特基型β-Ga2O3日盲紫外光电探测器

本文制备并研究了肖特基型β-Ga₂O₃日盲紫外光电探测器.结果表明：通过脉冲激光沉积外延生长的β-Ga₂O₃的（-201）晶面 X射线衍射峰半高宽仅为36 arcsec，表现出了高的晶体质量；光暗条件下的I-V曲线显示所制备的器件具有明显的肖特基整流特性，在-5V偏压下暗电流保持在0.1nA量级，正向导通电压为1.5V；光电流谱显示器件在240nm处存在显著的峰值响应，并在260nm左右呈现陡峭的截止边，日盲紫外的带内带外抑制比达到1000.同时，也研究了不同掺杂对Ga₂O₃晶体质量的影响.

Schottky β-Ga2O3 Solar-Blind UV Photodetectors

In this work,we fabricate and investigate the Schottky β-Ga₂O₃ solar-blind UV photodetectors.The results show that full width at half maximum of the X-ray diffraction peak from (-201) plane of the β-Ga₂O₃ grown by pulsed laser deposition is only 36 arcsec,indicating that the epitaxial β-Ga₂O₃ has a high crystal quality.The fabricated Schottky diodes based on the β-Ga₂O₃ exhibits obvious Schottky rectification characteristic,and the dark current maintains at 0.1 nA magnitude under -5 V bias voltage,and forward conduction voltage is 1.5 V.The photocurrent spectrum show that the device exhibits remarkable peak response at 240 nm,a steep cutoff wavelength at 260 nm,and a rejection ratio of 1000 between in-band and out-band of solar-blind ultraviolet.Meantime,the effects of different dopants on the crystal quality of β-Ga₂O₃ are also studied.