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共面微波探针在片测试技术研究
引用本文:孙伟,田小建,何炜瑜,张大明,李德辉,衣茂斌.共面微波探针在片测试技术研究[J].电子学报,2001,29(2):222-224.
作者姓名:孙伟  田小建  何炜瑜  张大明  李德辉  衣茂斌
作者单位:集成光电子学国家重点联合实验室吉林大学实验区,吉林大学,长春 130023
基金项目:博士点基金,集成光电子学国家联合重点实验室开放课题项目
摘    要:本文描述了使用共面微波探针的半导体芯片在片测试技术.设计研制出的多种微波探针性能参数稳定,使用寿命在十万次以上,用于在片检测各种GaAs共面集成电路芯片.触头排列为GSG的微波探针,-3dB带宽及反射损耗分别为14GHz和小于-10dB.

关 键 词:微波探针  在片测试  半导体集成电路  
文章编号:0372-2112(2001)02-0222-03
收稿时间:1999-11-23

On-Wafer Measurement Techniques Using Coplanar Microwave Probe
SUN Wei,TIAN Xiao-jian,HE Wei-yu,ZHANG Da-ming,LI De-hui,YI Mao-bin.On-Wafer Measurement Techniques Using Coplanar Microwave Probe[J].Acta Electronica Sinica,2001,29(2):222-224.
Authors:SUN Wei  TIAN Xiao-jian  HE Wei-yu  ZHANG Da-ming  LI De-hui  YI Mao-bin
Affiliation:National Integrated Optoelectronic Union Laboratory Jilin University Region,Jilin University,Changchun 130023,China
Abstract:We present an on-wafer measurement technique of semiconductor wafer using special coplanar microwave probes.The probe parameters are repeatable enough for S-parameter measurements and the probe life is with 100,000 contacts guaranteed.The multi-contact microwave wafer probe has been developed for on-wafer testing and sifting of GaAs integrated circuits with coplanar type.The insertion loss of microwave probe with a GSG footprint pattern is typically less than 30dB,and the return loss is at least 10dB at frequencies below 14GHz.
Keywords:microwave probe  on-wafer test  semiconductor integrated circuit
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