| 光电双基区晶体管(PDUBAT)的器件模型 |
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| 引用本文： | 张生才,郑云光,郭辉,李树荣,张世林,郭维廉,胡泽军,夏克军.光电双基区晶体管(PDUBAT)的器件模型[J].电子学报,2003,31(5):790-792. |
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| 作者姓名： | 张生才 郑云光 郭辉 李树荣 张世林 郭维廉 胡泽军 夏克军 |
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| 作者单位： | 天津大学电子信息工程学院,天津 300072 |
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| 基金项目： | 天津市自然科学基金资助项目 (No.98360 1 4 1 1 ) |
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| 摘 要： | 本文在考虑了晶体管的小注入效应和大注入效应以及基区宽变效应等因素后,首次用近似和简化的数学表示式和相应的等效电路,描述了光电双基区晶体管(PDUBAT)负阻形成的机理并使负阻区和谷值区的理论计算和实验结果一致性很好.
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| 关 键 词： | 光电双基区晶体管 反馈电流 瞬态电流 |
| 文章编号： | 0372-2112(2003)05-0790-03 |
| 收稿时间： | 2002-06-07 |
A Device Model of Photoelectric Dual Base Transistor |
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| ZHANG Sheng cai,ZHENG Yun guang,GUO Hui,LI Shu rong,ZHANG Shi lin,GUO Wei lian,HU Ze jun,XIA Ke jun.A Device Model of Photoelectric Dual Base Transistor[J].Acta Electronica Sinica,2003,31(5):790-792. |
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| Authors: | ZHANG Sheng cai ZHENG Yun guang GUO Hui LI Shu rong ZHANG Shi lin GUO Wei lian HU Ze jun XIA Ke jun |
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| Affiliation: | College of Electronic Information Engineering,Tianjin University,Tianjin 300072,China |
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| Abstract: | By adopting the approximate and simplified mathematical expressions and the relative equivalent circuit for the first time in consideration of the low injection effect,the high injection effect and the early effect etc.of the transistor,the mechanism for the origin of the negative resistance in photoelectric dual base transistor (PDUBAT) has been described.The theoretical calculation is well consistent with experimental results in the negative resistance region and the valley region. |
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| Keywords: | photoelectric dual base transistor feedback current transient current |
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