High-voltage SiC and GaN power devices |
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Authors: | T Paul Chow |
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Affiliation: | Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180-3590, USA |
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Abstract: | The recent progress in the development of high-voltage SiC and GaN power switching devices is reviewed. The experimental performance of various rectifiers and transistors, which have been demonstrated, is discussed. Material and processing challenges and reliability concerns on SiC and GaN power devices are also described. The future trends in device development and commercialization are pointed out. |
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Keywords: | Silicon carbide Gallium nitride Power semiconductor devices New devices |
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