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An analytical parasitic resistance dependent Id–Vd model for planar doped InAlAs/InGaAs/InP HEMT using non-linear charge control analysis |
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| Authors: | Ritesh Gupta Abhinav Kranti S Haldar Mridula Gupta R S Gupta |
| Affiliation: | a Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus, New Delhi 110 021, India b Motilal Nehru College, University of Delhi, Benito Juarez Road, New Delhi 110 021, India |
| Abstract: | An analytical parasitic resistance dependent model for the current voltage characteristics for InAlAs/InGaAs/InP HEMT is proposed. The model uses a new polynomial dependence of sheet carrier concentration on gate voltage to calculate Id–Vd characteristics and has been extended to obtain transconductance, output conductance and cut-off frequency of the device. A maximum cut-off frequency of 83 and 175 GHz was obtained for channel length of 0.25 and 0.1 μm, respectively. Close agreement with published results confirms the validity of our approach. |
| Keywords: | InAlAs/InGaAs heterostructure InP-based HEMT Planar doped Parasitic resistances Id–Vd characteristics Transconductance Output conductance Cut-off frequency |
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