Phase formation and texture of nickel silicides on Si1−xCx epilayers |
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Authors: | K De Keyser B De SchutterC Detavernier V MachkaoutsanM Bauer SG ThomasJ Jordan Sweet C Lavoie |
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Affiliation: | a Department of Solid State Physics, Ghent University, Krijgslaan 281/S1, 9000 Gent, Belgium b ASM, Kapeldreef 75, 3001 Leuven, Belgium c ASM, 3440 East University Drive, Phoenix, AZ 85034, USA d I.B.M. Research, Yorktown Heights, NY 10598, USA |
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Abstract: | We investigated the phase formation and texture of nickel silicides formed during the reaction of 10 nm sputter deposited nickel with Si1−xCx epitaxial layers on Si(1 0 0) substrates, having a carbon content between 0 and 2.5 atomic percent. It was found that both the formation temperature as well as the texture of the metal-rich phases is influenced by the amount of carbon in the Si1−xCx layer. To determine the influence of the location of the carbon during the silicidation process we also investigated the reaction of 10 nm nickel on Si(1 0 0) substrates, where carbon was either alloyed in the nickel layer or deposited as an interlayer at the interface between the nickel and the substrate. Depending on the location of the carbon, a different thermal stability of the layer was found. |
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Keywords: | Silicide Thermal stability Carbon Phase formation Texture |
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