Investigation of the heel crack mechanism in Al connections for power electronics modules |
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| Authors: | Y Celnikier L Benabou L Dupont G Coquery |
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| Affiliation: | a Laboratoire d’Ingénierie des Systèmes de Versailles (LISV), Université de Versailles Saint-Quentin, 45 Avenue des Etats-Unis, 78035 Versailles, France;b Laboratoire des Technologies Nouvelles (LTN), Institut National de Recherche sur les Transports et leur Sécurité, 25 Allée des Marronniers, 78000 Versailles, France |
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| Abstract: | In power electronic packages, one of the main limiting factors for the module reliability stems from failure of the electrical interconnection which ensures the contact between the chip and the lead frame. The aim of this work is to model, using FEM and some analytical developments, the interconnection heel crack mechanism appearing in service. The forming process impact is particularly evaluated and it is established that the initial residual stresses contribute to limit the wire/ribbon life time. |
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