Performance improvement of Si-CCD detector based backside reflected light and photon emission microscopy by FIB ultimate substrate thinning |
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| Authors: | A Glowacki C Boit P Perdu |
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| Affiliation: | 1. Semiconductor Devices Division, Berlin University of Technology, Berlin, Einsteinufer 19, 10587 Berlin, Germany;2. French Space Agency (CNES), Toulouse, France;1. Terahertz Center, University of Regensburg, Regensburg, Germany;2. Ioffe Institute, St. Petersburg, Russia;3. Technische Physik University of Würzburg, Würzburg, Germany;4. University of St Andrews, St Andrews, United Kingdom;1. National Space Science Center, Chinese Academy of Sciences, Beijing, China;2. Beijing Key Laboratory of Space Environment Exploration, Beijing, China;3. Key Laboratory of Environmental Space Situation Awareness Technology, Beijing, China;4. National Satellite Meteorological Center, China Meteorological Administration, Beijing, China;1. U.S. Army Research Laboratory, Adelphi, MD 20783, United States;2. L-3 Communications - Cincinnati Electronics, Mason, OH 45040, United States;1. Department of Physics, Shahrood University of Technology, P.O. Box 36199-95161, Shahrood, Iran;2. Department of Physics, Tarbiat Modares University, P.O. Box 14115-175, Tehran, Iran;3. School of Physics, Institute for Research in Fundamental Sciences (IPM), P.O.Box 19395-5531, Tehran, Iran |
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| Abstract: | In FA laboratories a significant number of photon emission microscopy (PEM) systems are equipped with the most common detector, namely cooled Si-CCD camera. Backside reflected light microscopy (RLM) and photon emission microscopy (PEM) using this detector are possible but strongly limited by the interaction of light with silicon substrate. In this work, we show the improvement of the RLM and PEM performed from the chip backside using standard cooled Si-CCD camera by localized focused-ion-beam (FIB) assisted silicon substrate removal. Thinning down the silicon substrate significantly improves signal-to-noise ratio of the techniques as well as their resolving properties. It also enables extended spectral analysis, also in the visible regime of the light spectrum. This study has been done using 120 nm technology process test structures. |
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