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一种宽带低噪声放大器的设计
引用本文:吴国增.一种宽带低噪声放大器的设计[J].电子测试,2010(9):62-65.
作者姓名:吴国增
作者单位:聊城大学东昌学院,聊城,252000
基金项目:聊城大学东昌学院青年教师基金 
摘    要:随着无线通信的迅猛发展,提高了对射频技术的要求。本文就射频前端的低噪声放大器设计进行研究和分析,并且进行了流片生产和测试。首先进行了基础理路的研究分析,通过仿真电路满足性能,最后再通过流片测试得到结论。本文中对其带宽以及噪声系数进行了测试并且与预期效果很接近。通过本文设计得到了带宽为近1.5GHz,其增益的大小为23.2dB。

关 键 词:高性能双极晶体管  低噪声放大器  增益

Kind of wideband low noise amplifier
Wu Guozeng.Kind of wideband low noise amplifier[J].Electronic Test,2010(9):62-65.
Authors:Wu Guozeng
Affiliation:Wu Guozeng(Dongchang College of Liaocheng University,liaocheng,252000)
Abstract:With the rapid development of wireless communications,increased demands on radio frequency technology.In this paper,the RF front-end low-noise amplifier design research and analysis,and were tape production and testing.First of all,in basic Thoughts through research and analysis,the simulation circuit to meet performance,and finally through the tape test conclusion In this article,its bandwidth and noise figure has been tested and is very close to the expected results.This article has been through the design bandwidth of nearly 1.5GHz,the gain of the size of 23.2dB.
Keywords:high-performance  low-noise amplifier  gain of bipolar transistors
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