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Generation and Detection of Terahertz Waves Using Low‐Temperature‐Grown GaAs with an Annealing Process |
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| Authors: | Kiwon Moon Jeongyong Choi Jun‐Hwan Shin Sang‐Pil Han Hyunsung Ko Namje Kim Jeong‐Woo Park Young‐Jong Yoon Kwang‐Yong Kang Han‐Cheol Ryu Kyung Hyun Park |
| Affiliation: | 1. Kiwon Moon (phone: + 82 42 860 6326, kwmoon@etri.re.kr), Jeongyong Choi (yongs@etri.re.kr), Jun‐Hwan Shin (jhshin7@etri.re.kr), Sang‐Pil Han (sphan@etri.re.kr), Hyunsung Ko (hsko85@etri.re.kr), Namje Kim (namjekim@etri.re.kr), Jeong‐Woo Park (pjw21@etri.re.kr), Young‐Jong Yoon (yyjjong@etri.re.kr), and Kyung Hyun Park (khp@etri.re.kr) are with the Creative Future Research Laboratory, ETRI, Daejeon, Rep. of Korea.;2. Kwang‐Yong Kang (kykang@changwon.ac.kr) is with the Industry‐University Cooperation Foundation, Changwon National University, Changwon, Rep. of Korea.;3. Han‐Cheol Ryu (hcryu@syu.ac.kr) is with the Department of Car Mechatronics, Sahmyook University, Seoul, Rep. of Korea. |
| Abstract: | In this letter, we present low‐temperature grown GaAs (LTG‐GaAs)‐based photoconductive antennas for the generation and detection of terahertz (THz) waves. The growth of LTG‐GaAs and the annealing temperatures are systematically discussed based on the material characteristics and the properties of THz emission and detection. The optimum annealing temperature depends on the growth temperature, which turns out to be 540°C to 580°C for the initial excess arsenic density of  to  . |
| Keywords: | LTG‐GaAs terahertz wave photomixer |