| 微波器件及IC用SI－GaAs材料现状及展望 |
| |
| 引用本文： | 刘鹏.微波器件及IC用SI－GaAs材料现状及展望[J].信息技术与信息化,1996(2). |
| |
| 作者姓名： | 刘鹏 |
| |
| 作者单位： | 淄博开发区金晶电子材料厂 |
| |
| 摘 要： | 本文介绍了国内外ＳＩ－ＧａＡｓ材料的市场现状及应用，简述了ＳＩ－ＧａＡｓ材料制备新工艺和提高质量水平的途径，指出ＳＩ－ＧａＡｓ材料的发展方向及市场前景，并对我国ＳＩ－ＧａＡｓ材料与国外相比所存在的差距作了分析，提出今后发展的方向。
|
| 关 键 词： | 半绝缘砷化镓，集成电路，单晶，位错密度，微波器件 |
Current Situation and Prospect of SI-GaAs Used on IC and Microwave Devices |
| |
| Liu Peng.Current Situation and Prospect of SI-GaAs Used on IC and Microwave Devices[J].Information Technology & Informatization,1996(2). |
| |
| Authors: | Liu Peng |
| |
| Abstract: | The use of SI-GaAs material and the current situation of its market at home and abroad are described.The new technology for preparation of SI-GaAs material and the ways to improve the material quality are briefly introduced.The developing orientation and market prospect of SI-GaAs material are pointed out.Moreover,the disparity of SI-GaAs material made in our country as compared with overseas materials is analysed.The developing direction ahead of home material is put forward. |
| |
| Keywords: | SI-GaAs IC Single crystal EPD Microwave Device |
| 本文献已被 CNKI 等数据库收录！ |
