| 808nm波长高功率阵列半导体激光器 |
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| 引用本文： | 高欣,王玲,高鼎三,曲轶,薄报学.808nm波长高功率阵列半导体激光器[J].中国激光,2001,28(6):494-496. |
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| 作者姓名： | 高欣 王玲 高鼎三 曲轶 薄报学 |
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| 作者单位： | 吉林大学电子工程系集成光电子学国家联合重点实验室!长春光机学院高功率半导体激光国家重点实验室长春130023(薄报学)，长春光机学院高功率半导体激光国家重点实验室!长春130023(王玲，曲轶)，吉林大学电子工程系集成光电子学国家联合重点实 (高鼎三) |
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| 摘 要： | 报道了采用MBE外延生长方法制备的叠层阵列CW工作型高功率半导体激光器。激光器的生长结构采用经过优化的单量子阱渐变折射率分别限制波导结构 ,激光器芯片结构为标准的CM条 ,注入因子设计为 6 0 %。叠层装配采用了具有高效散热能力的水冷结构。经初步测试 ,叠层器件的阈值电流为 12A ,直流 30A驱动电流下的输出功率达 40W ,斜率效率为 2 2W /A。器件中心激射波长为 810nm ,光谱宽度 (FWHM )为 6nm。
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| 关 键 词： | 叠层阵列 半导体激光器 高功率 |
| 收稿时间： | 2000/2/14 |
808 nm Wavelength High Power Semiconductor Laser Arrays |
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| BO Baoxue,QU Yi,WANG Ling,Gao Dingsan,GAO Xin.808 nm Wavelength High Power Semiconductor Laser Arrays[J].Chinese Journal of Lasers,2001,28(6):494-496. |
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| Authors: | BO Baoxue QU Yi WANG Ling Gao Dingsan GAO Xin |
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| Affiliation: | 1. National Key Lab of High Power Semiconductor Lasers,Changchun Institute of Optics and Fine Mechanics,
2. National Key Lab of Integrated Optoelectronics, Department of Electronic Engineering,Jilin University |
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| Abstract: | High power semiconductor laser stack arrays, grown by MBE have been prepared. The epitaxial structure for LD is an optimized SQW GRIN SCH structure, and cm bars are made with a fill factor of 60%. A LD stack assembly with water cooling is formed to obtain an effective heat delivery ability. The following results are preliminarily obtained: Ith of the stack lasers is 12 A, CW output power can reach to 40 W at 30 A; FWHM of the lasing spectrum is 6 nm with a central wavelength of 810 nm, and the slope efficiency (ηs) is 2.2 W/A. |
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| Keywords: | stack array semiconductor laser high power |
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