| 准分子脉冲激光沉积法制备的ZrO2薄膜结构和电学性能的研究 |
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| 引用本文： | 章宁琳,宋志棠,邢溯,万青,林成鲁.准分子脉冲激光沉积法制备的ZrO2薄膜结构和电学性能的研究[J].中国激光,2003,30(4):345-348. |
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| 作者姓名： | 章宁琳 宋志棠 邢溯 万青 林成鲁 |
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| 作者单位： | 中国科学院上海微系统和信息技术研究所信息功能材料国家重点实验室,上海,200050 |
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| 基金项目： | 国家 973(G2 0 0 0 0 36 5 0 6 )，国家自然科学基金 (J96 0 2 0 2 s和 90 10 10 12 )资助项目 |
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| 摘 要： | 采用准分子脉冲激光沉积法 (PLD)分别在Pt/Ti/SiO2 /Si和SiO2 /Si衬底上制备了ZrO2 薄膜 ,采用扩展电阻法 (SRP)研究了薄膜纵向电阻分布 ;采用X射线衍射法 (XRD)研究了衬底温度对ZrO2 薄膜结晶性能的影响 ;精确测试了薄膜的表面粗糙度 ;讨论了薄膜结晶性能与其电学I V特性之间的关系。
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| 关 键 词： | 薄膜物理学 ZrO2薄膜 脉冲激光沉积法 衬底温度 结晶结构 电学性能 |
| 收稿时间： | 2002/1/28 |
Investigations on the Relations between Crystal Structure and Electrical Properties of ZrO2 Thin Films |
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| ZHANG Ning lin,SONG Zhi tang,XING Su,WAN Qing,LIN Cheng lu.Investigations on the Relations between Crystal Structure and Electrical Properties of ZrO2 Thin Films[J].Chinese Journal of Lasers,2003,30(4):345-348. |
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| Authors: | ZHANG Ning lin SONG Zhi tang XING Su WAN Qing LIN Cheng lu |
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| Abstract: | ZrO 2 thin films were deposited on Pt/Ti/SiO 2/Si and SiO 2/Si substrates by pulsed laser deposition (PLD), respectively. Spreading resistance profile (SRP) was used to study the resistivity distribution across the ZrO 2 thin films. The relations between the crystal structure and substrate temperature were tested, using X ray diffraction (XRD). The surface roughness of ZrO 2 thin films is measured accurately and the influence of the crystal structure of the ZrO 2 thin films on their electrical I-V characteristics is birefly discussed. |
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| Keywords: | thin film physics ZrO 2 thin film PLD substrate temperature crystal structure electrical property |
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