准连续17 kW 808 nm GaAs/AlGaAs叠层激光二极管列阵

高功率激光二极管列阵广泛应用于抽运固体激光器.报道了17 kW GaAs/AlGaAs叠层激光二极管列阵的设计、制作过程和测试结果.为了提高器件的输出功率,一方面采用宽波导量子阱外延结构,降低腔面光功率密度,提高单个激光条的输出功率,通过金属有机物化学气相沉积(MOCVD)方法进行材料生长,经过光刻、金属化、镀膜等工艺制备1 cm激光条,填充密度为80%,单个激光条输出功率达100 W以上;另一方面器件采用高密度叠层封装结构,提高器件的总输出功率,实现了160个激光条叠层封装,条间距0.5 mm.经测试,器件输出功率达17kW,峰值波长为807.6 nm,谱线宽度为4.9 nm.

Quasi-CW 17 kW 808 nm GaAs/AlGaAs Stack Laser Diode Arrays

High power 808nm laser diodes are widely used for pumping Nd∶YAG solid-state lasers. In this paper the design, fabrication and the test results of 17 kW GaAs/AlGaAs stack laser diode arrays are reported. In order to achieve higher power, one of approaches is to use a broad waveguide structure, which effectively reduces the intensity on the facets and allows for higher output power. The structures were grown by metalorganic chemical vapor deposition. The output power of 100 W of 1 cm monolithic laser bars with a 80% filled factor has been abtained; Additionally, the stack structure was used. The laser diode array comprises 160 bars. The pitch of bars is 0.5 mm. The output power of 17 kW has been abtained. The emitting peak wavelength is 807.6 nm and FHWM is 4.9 nm.