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用固态杂质源在GaAs衬底上实现的连续波CO_2激光诱导Zn扩散
引用本文:叶玉堂,李忠东,洪永和,叶灵,李家旭. 用固态杂质源在GaAs衬底上实现的连续波CO_2激光诱导Zn扩散[J]. 中国激光, 1997, 24(3): 237-241
作者姓名:叶玉堂  李忠东  洪永和  叶灵  李家旭
作者单位:电子科技大学光电子技术系
摘    要:用含Zn的固态杂质源,在化合物半导体GaAs基片上进行了连续波(CW)10.6μm激光诱导扩散,做出了P-N结。分别利用扫描电子显微镜和二次离子质谱仪对扩散样品进行扩散区形貌分析和杂质分布研究,给出了结深xj、杂质浓度分布C(x,t,T)等性能参数和扩散时间t、温度T等工艺参数之间的关系,获得了亚微米的扩散结结深及1020cm-3量级的表面掺杂浓度

关 键 词:激光诱导扩散,光电子,半导体
收稿时间:1996-03-25

Continuous Wave CO 2 Laser Induced Diffusion of Zn into GaAs Using a Solid State Diffusion Source
Ye Yutang Li Zhongdong Hong Yonghe Ye Ling Li Jiaxu. Continuous Wave CO 2 Laser Induced Diffusion of Zn into GaAs Using a Solid State Diffusion Source[J]. Chinese Journal of Lasers, 1997, 24(3): 237-241
Authors:Ye Yutang Li Zhongdong Hong Yonghe Ye Ling Li Jiaxu
Abstract:The P-N junctions were produced by continuous wave (CW) CO 2 induced diffusion of Zn into a GaAs substrate using a solid state diffusion source. After the samples were exposed to the laser radiation, the features of the exposed region were studied by scaning electron microscopy (SEM), and the dopant profiles were examined using a secondary ion mass spectrometry (SIMS). The performance parameters of the P-N junctions such as xj and C(x,t,T) are presented as functions of the diffusion time t and temperature T. The experimental results show that the junction depth xj reaches submicron and the dopant concentration is of the order of 20 20 cm -3.
Keywords:laser induced diffusion   photo electron   semiconductor  
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