可用于极紫外光刻的三线毛细管的概念设计

极紫外光刻(EUVL)技术是目前193 nm浸没式光刻技术的延伸,有望突破30 nm或更小技术节点而成为下一代光刻(NGL)技术的主流。毛细管放电极紫外(EUV)光源可为极紫外光刻研究提供高效、便捷的光刻源头,但光源的辐射功率较低一直制约着极紫外光刻技术的发展。三线毛细管放电极紫外光源的概念设计与常用毛细管装置有着本质的区别,它们不同的工作机制将使三线毛细管放电产生的环带状等离子体极紫外光源的辐射功率明显高于常用毛细管的情形,最佳收集角也得到相应的提高。三线毛细管概念设计方案的提出不仅从技术上开拓出一片全新的领地,为极紫外光刻研究提供所需的光源,而且从效益上看更适合于大规模工业生产。

Concept Design of Three-Line Capillary: Possible Source for Extreme Ultraviolet Lithography

Extreme ultraviolet lithography (EUVL) technology, the extensional technology of 193 nm immersion lithography, would breakthrough the 30 nm node or below and become the main technology of the next generation lithography (NGL). Although the capillary discharge extreme ultraviolet (EUV) source could provide efficient and convenient light for EUVL investigation, its low power confines the development of EUVL. The concept design of three-line capillary discharge EUV source will be essentially different from conventional capillary discharge channel, which will also make a great difference of dynamical mechanism. The circular loop band plasma column of three-line capillary discharge EUV source irradiates more EUV power than conventional capillary discharge device does and the optimal divergence angle of the former will be improved too. The concept design plan of three-line capillary discharge will not only create a new area for EUVL research technically, but also help to produce light sources industrially and economically.