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Nd∶YAG晶体生长过程中Nd3+浓度场的数值模拟
引用本文:苏伟,钟景昌,张丽波,岑学员,李林,赵英杰.Nd∶YAG晶体生长过程中Nd3+浓度场的数值模拟[J].中国激光,2003,30(5).
作者姓名:苏伟  钟景昌  张丽波  岑学员  李林  赵英杰
作者单位:1. 长春理工大学,计算机科学与技术学院,吉林,长春,130022;长春理工大学,高功率半导体激光国家重点实验室,吉林,长春,130022
2. 长春理工大学,高功率半导体激光国家重点实验室,吉林,长春,130022
3. 中国第一汽车集团公司技术中心,吉林,长春,130011
4. 广州市半导体材料研究所光电子材料中心,广东,广州,510610
摘    要:采用有限差分法 (FDM)对使用Cz(Czochralski)法生长Nd∶YAG激光晶体过程中熔体内和晶体内Nd3+ 浓度场进行数值模拟研究。首先给出了Nd∶YAG晶体生长系统的数学模型 ,然后对上述数学模型进行无量纲化处理 ,最后给出相应的边界条件 ,使用有限差分法求解上述方程。应用上述方法编制仿真程序 ,仿真了改变工艺条件后熔体内和晶体内Nd3+ 浓度场的变化情况 ,分析了各种工艺条件对上述场量变化的影响。

关 键 词:人工晶体  晶体生长  有限差分法  数值模拟  浓度场

Numerical Simulation Study on Field of Nd3+ Concentration during the Growth of Nd∶YAG Crystal
SU Wei ,ZHONG Jing chang ,ZHANG Li bo ,CEN Xue yuan ,LI Lin ,ZHAO Ying jie College of Computer Science and Technology,National Key Lab of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,Jilin ,China R & D Center of China FAW Group Corporation,Changchun,Jilin ,Chia Center of Optoelectronic Materials,Guangzhou Institute of Semiconductor Materials,Guangzhou,Guangdong ,China.Numerical Simulation Study on Field of Nd3+ Concentration during the Growth of Nd∶YAG Crystal[J].Chinese Journal of Lasers,2003,30(5).
Authors:SU Wei    ZHONG Jing chang  ZHANG Li bo  CEN Xue yuan  LI Lin  ZHAO Ying jie College of Computer Science and Technology  National Key Lab of High Power Semiconductor Lasers  Changchun University of Science and Technology  Changchun  Jilin  China R & D Center of China FAW Group Corporation  Changchun  Jilin  Chia Center of Optoelectronic Materials  Guangzhou Institute of Semiconductor Materials  Guangzhou  Guangdong  China
Affiliation:SU Wei 1,2,ZHONG Jing chang 2,ZHANG Li bo 3,CEN Xue yuan 4,LI Lin 2,ZHAO Ying jie 2 1College of Computer Science and Technology,2National Key Lab of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,Jilin 130022,China 3R & D Center of China FAW Group Corporation,Changchun,Jilin 130011,Chia 4Center of Optoelectronic Materials,Guangzhou Institute of Semiconductor Materials,Guangzhou,Guangdong 510610,China
Abstract:
Keywords:synthetic crystal  crystal growth  finite differential method (FDM)  numerical simulation  field of concentration
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