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| 980 nm高功率垂直腔面发射激光器 | |
| 引用本文： | 赵路民,王青,晏长岭,秦莉,刘云,宁永强,王立军.980 nm高功率垂直腔面发射激光器[J].中国激光,2004,31(2):42-144. |
| 作者姓名： | 赵路民 王青 晏长岭 秦莉 刘云 宁永强 王立军 |
| 作者单位： | 1. 中国科学院激发态物理开放实验室,中国科学院长春光学精密机械与物理研究所,吉林,长春,130021;吉林大学电子科学与工程学院,吉林,长春,130026 2. 中国科学院激发态物理开放实验室,中国科学院长春光学精密机械与物理研究所,吉林,长春,130021 3. 中国科学院激发态物理开放实验室,中国科学院长春光学精密机械与物理研究所,吉林,长春,130021;长春理工大学高功率半导体激光国家重点实验室,吉林,长春,130022 |
| 基金项目： | 吉林省基金 (编号 :2 0 0 2 0 6 0 4 )，国家自然科学基金 (编号 :10 10 4 0 16 )资助项目 |
| 摘 要： | 研究了 980nm垂直腔面发射激光器 (VCSEL)的结构设计和器件制作 ,实现了室温下的脉冲激射。在脉宽为 5 0 μs,占空比为 5∶10 0 0的脉冲电流下 ,直径 4 0 0 μm的器件输出光功率最高可达 380mW ,发散角小于 10° ,光谱的半高全宽为 0 8nm。 |
| 关 键 词： | 激光技术 半导体激光器 垂直腔面发射激光器 分子束外延 量子阱结构 氧化工艺 |
| 收稿时间： | 2003/5/12 |
980 nm High Power Vertical Cavity Surface Emitting Laser |
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| ZHAO Lu-min ,WANG Qing ,YAN Chang-ling ,QIN Li ,LIU Yun ,NING Yong-qiang ,WANG Li-jun Lab. of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,The Chinese Academy of Sciences,Changchun,Jilin ,China National Key Lab on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,Jilin ,China College of Electronic and Engineering of Jilin University,Changchun,Jilin ,China.980 nm High Power Vertical Cavity Surface Emitting Laser[J].Chinese Journal of Lasers,2004,31(2):42-144. | |
| Authors: | ZHAO Lu-min WANG Qing YAN Chang-ling QIN Li LIU Yun NING Yong-qiang WANG Li-jun Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics The Chinese Academy of Sciences Changchun Jilin China National Key Lab on High Power Semiconductor Lasers Changchun University of Science and Technology Changchun Jilin China College of Electronic and Engineering of Jilin University Changchun Jilin China |
| Affiliation: | ZHAO Lu-min 1,3,WANG Qing 1,YAN Chang-ling 1,2,QIN Li 1,LIU Yun 1,NING Yong-qiang 1,WANG Li-jun 1 1Lab. of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,The Chinese Academy of Sciences,Changchun,Jilin 130021,China 2National Key Lab on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,Jilin 130022,China 3College of Electronic and Engineering of Jilin University,Changchun,Jilin 130026,China |
| Abstract: | 980nm vertical cavity surface emitting laser had been fabricated, and the pulse operation with high output power had also been realized at room temperature (24℃). With 5/1000 duty cycle and 50 μs pulse duration, the maximum optical output power was 380 mW for 400 μm diameter device. The divergence angle was less than 10°, and the FWHM of lasing spectrum was 0.8 nm. |
| Keywords: | laser technique semiconductor laser vertical cavity surface emitting laser molecular beam epitaxy quantum well structure oxidation process |
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