激光熔蚀反应淀积AlN薄膜残余应力及热稳定性的研究

激光熔蚀反应淀积于 Si(10 0 ) ,Si(111)基底上的 Al N薄膜是高质量高取向性的 Al N多晶膜 ,薄膜与基底的取向关系为 Al N(10 0 )∥ Si(10 0 ) ,Al N(110 )∥ Si(111)。薄膜具有较低的残余应力和较好的热稳定性。实验结果表明 ,当氮气压强和放电电压分别为 10 0× 133.33Pa和 6 50 V时 ,薄膜的残余应力低于 3GPa。此样品在纯氧环境 50 0℃时 ,经过 3h的退火 ,红外吸收谱检测未发现有Al2 O3 特征峰出现。对 Al N/Cu双层膜的研究表明所制备的 Al N薄膜在金属薄膜的防护上也有潜在的应用价值。

Residual Stress and Thermal Stability of AlN Thin Films Deposited by Reactive Laser Ablation

The high quality polycrystalline AlN thin films have been deposited on the (100) and (111) Si substrates, the orientation relation between films and substrates was AlN(100)∥Si(100), AlN(110)∥Si(111) respectively. The AlN films have low residual stress and well thermal stability. The experimental result shows that the residual stress of AlN films prepared with 100×133.33 Pa nitrogen pressure and 650 V discharge-voltage was lower than 3 GPa. The infrared spectrum of the AlN films after annealed for 3 hours at 500℃ in pure oxygen atmosphere displayed the nonexistence of Al2O3. And the investigation of AlN/Cu dual-layer film showed the positive effect of AlN thin films on the protecting of metallic films.