| 硅中缺陷的透射电镜观察 |
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| 引用本文： | 谢锋,刘剑霜,陈一,胡刚.硅中缺陷的透射电镜观察[J].半导体技术,2004,29(3):28-30,66. |
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| 作者姓名： | 谢锋 刘剑霜 陈一 胡刚 |
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| 作者单位： | 复旦大学国家微分析中心TEM实验室,上海,200433 |
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| 摘 要： | 随着集成电路制造工艺技术的不断进步,器件线宽不断减小,硅材料中缺陷的危害越来越不可忽视.通过TEM观察了硅中氧沉积、工艺诱生缺陷等并对之进行了分析.
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| 关 键 词： | 透射电镜 氧沉积 二次缺陷 工艺诱生缺陷 透射电镜观察 defect silicon 分析 氧沉积 硅材料 器件线宽 工艺技术 集成电路制造 |
| 文章编号： | 1003-353X(2004)03-0028-03 |
TEM analysis of silicon defect |
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| XIE Feng,LIU Jian-shuang,CHEN Yi,HU Gang.TEM analysis of silicon defect[J].Semiconductor Technology,2004,29(3):28-30,66. |
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| Authors: | XIE Feng LIU Jian-shuang CHEN Yi HU Gang |
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| Abstract: | In the IC manufacturing today, the line width decreases quickly and the influence ofsilicon defect in IC becomes more important. Transmission Electron Microscope is an effective methodin studying silicon defect. Several kinds of silicon defects, such as oxygen precipitate, processinduced defects and defects in gettering are discussed using TEM. |
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| Keywords: | TEM oxygen precipitate induced defect |
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