| 国内外多晶硅发展现状 |
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| 引用本文： | 蒋荣华,肖顺珍.国内外多晶硅发展现状[J].半导体技术,2001,26(11):7-10. |
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| 作者姓名： | 蒋荣华 肖顺珍 |
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| 作者单位： | 峨眉半导体材料所, |
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| 摘 要： | 叙述了国内外多晶硅的发展概况，讨论了多晶硅生产过程中改良西门子法的几项关键技术，并对我国多晶硅材料的研究提出了几点建议。
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| 关 键 词： | 半导体硅 多晶硅 工艺过程 |
| 文章编号： | 1003-353(2001)11-0007-04 |
| 修稿时间： | 2001年6月18日 |
Development and trend of international and internal polycrystal Si material |
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| JIANG Rong-hua,XIAO Shun-zhen.Development and trend of international and internal polycrystal Si material[J].Semiconductor Technology,2001,26(11):7-10. |
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| Authors: | JIANG Rong-hua XIAO Shun-zhen |
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| Abstract: | In this paper the development and the state of international and internal polycrystal Si material are narrated. The key technologies of improving Siemens method are discussed. The suggestions of developing our nation's polycrystal Si material are given. |
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| Keywords: | semiconductor Si polycrystal Si technological process |
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