| InGaAs/InP材料的MOCVD生长研究 |
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| 引用本文： | 刘英斌,林琳,陈宏泰,赵润,郑晓光.InGaAs/InP材料的MOCVD生长研究[J].半导体技术,2010,35(2):113-115,120. |
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| 作者姓名： | 刘英斌 林琳 陈宏泰 赵润 郑晓光 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051 |
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| 摘 要： | 研究了InGaAs/InP材料的MOCVD生长技术和材料的性能特征。InP衬底的晶向偏角能够明显影响外延生长模型以及外延层的表面形貌,用原子力显微镜(AFM)观察到了外延层表面原子台阶的聚集现象(step-bunching现象),通过晶体表面的原子台阶密度和二维生长模型解释了台阶聚集现象的形成。对外延材料进行化学腐蚀,通过双晶X射线衍射(DCXRD)分析发现异质结界面存在应力,用异质结界面岛状InAs富集解释了应力的产生。通过严格控制InGaAs材料的晶格匹配,并优化MOCVD外延生长工艺,制备出厚层InGaAs外延材料,获得了低于1×1015cm-3的背景载流子浓度和良好的晶体质量。
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| 关 键 词： | InGaAs 单原子层 台阶聚集 界面 金属有机物化学气相沉积 |
Research of InGaAs/InP Materials Grown by MOCVD |
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| Liu Yingbin,Lin Lin,Chen Hongtai,Zhao Run,Zheng Xiaoguang.Research of InGaAs/InP Materials Grown by MOCVD[J].Semiconductor Technology,2010,35(2):113-115,120. |
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| Authors: | Liu Yingbin Lin Lin Chen Hongtai Zhao Run Zheng Xiaoguang |
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| Affiliation: | The 13th Research Institute;CETC;Shijiazhuang 050051;China |
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| Abstract: | InGaAs/InP material growth technique and the characteristics were discussed.The surface morphology and the growth mode changing caused by InP substrate mis-orientation were analyzed.The trenches of multiple mono-layer(so called step-bunching) on the epi-layer surface were observed by AFM measurement.The step-bunching was explained by the surface step intensity and the two dimension growth mode.The materials were chemical etched layer by layer.The etched samples were analyzed by double crystal X-ray diffract... |
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| Keywords: | InGaAs InGaAs mono-layer (ML) step-bunching interface MOCVD |
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