| GaAs MIM电容模型 |
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| 引用本文： | 王生国,胡志富.GaAs MIM电容模型[J].半导体技术,2010,35(6):607-609,613. |
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| 作者姓名： | 王生国 胡志富 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,石家庄050051;中国电子科技集团公司,第十三研究所,石家庄050051 |
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| 摘 要： | 阐述了无源元件在MMIC设计中的重要性及MIM电容模型参数提取的几种方法.以简化的MIM电容等效电路为基础,通过IC-CAP建模软件,建立平板电容的等效模型模拟其电学特性.根据实测数据提取相关模型参数,同时与实际测试的MIM电容值进行对比,对ADS元件库中电容模型的关键参数做了修改和验证.经过在GaAs工艺线实际流片统计、验证,该模型在40 GHz以下实测的S参数与电磁仿真结果基本吻合,平板电容的误差控制在3%以内,可用于40 GHz以下CaAs MMIC的电路设计和仿真.
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| 关 键 词： | 砷化镓MMIC 模型 MIM电容 IC-CAP |
GaAs MIM Capacitor Model |
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| Wang Shengguo,Hu Zhifu.GaAs MIM Capacitor Model[J].Semiconductor Technology,2010,35(6):607-609,613. |
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| Authors: | Wang Shengguo Hu Zhifu |
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| Affiliation: | Wang Shengguo,Hu Zhifu(The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | The importance of passive device in MMICs design is presented,and some methods of extracting parameters for MIM capacitors are described.Based on a simplified equivalent circuit model and IC-CAP modeling software,a plate capacitor equivalent circuit model was established and the electrical characteristic was simulated.The model parameters were extracted according to the measurement data.Compared the simulated results with the measurement,the ADS built-in capacitor model is modified and verified.Through the ... |
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| Keywords: | IC-CAP |
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