首页 | 本学科首页   官方微博 | 高级检索  
     

硅凹槽中硅反蛋白石光子晶体直角半波导的制备
引用本文:韩喻,谢凯,李宇杰,许静.硅凹槽中硅反蛋白石光子晶体直角半波导的制备[J].半导体技术,2007,32(6):481-485.
作者姓名:韩喻  谢凯  李宇杰  许静
作者单位:国防科学技术大学,材料工程与应用化学系,长沙,410073
摘    要:探索了利用PECVD方法和ICP技术制备硅凹槽中硅反蛋白石(opal)结构光子晶体直角半波导的工艺条件,研究了射频功率、气体流量、反应室压力、沉积时间等PECVD工艺条件及基底状态对填充效果的影响.结果表明,降低沉积速率有利于在蛋白石结构内外均匀填充,同时在自由基扩散通道不被堵塞的前提下,增加沉积时间及蛋白石结构的规整程度,有助于反opal结构的形成.

关 键 词:三维光子晶体  反蛋白石结构  Si凹槽  直角波导  凹槽  硅反蛋白石  光子晶体  直角  波导  Embedded  Orthogonal  Inverse  Opal  规整程度  前提  堵塞  扩散通道  自由基  均匀  石结构  沉积速率  结果  影响  填充效果  基底状态
文章编号:1003-353X(2007)06-481-05
修稿时间:2006-11-20

Preparation of Si Inverse Opal Orthogonal Wave-Guide Embedded in Si Flute
HAN Yu,XIE Kai,LI Yu-jie,XU Jing.Preparation of Si Inverse Opal Orthogonal Wave-Guide Embedded in Si Flute[J].Semiconductor Technology,2007,32(6):481-485.
Authors:HAN Yu  XIE Kai  LI Yu-jie  XU Jing
Affiliation:Department of Materials Engineering and Applied Chemistry, National University of Defense Technology, Changsha 410073, China
Abstract:The methods to prepare the Si inverse opal half orthogonal wave-guide embedded in Si flute by PECVD and ICP were explored.The influences of the PECVD and substrate conditions of RF power,flow rate,pressure in reaction,depositing time on the filling effect were studied.The results indicate that low reaction rate is helpful to sediment evenly,and if the free radical diffusion channel is not closed,the increasing of depositing time and the orderly opal structure are also important in this method.
Keywords:3D photonic crystal  inverse opal structure  Si flute  orthogonal wave-guide
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号