| 脉冲压缩开关DBD研究 |
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| 引用本文： | 谭科民,杨勇,崔占东,马红梅,刘忠山,陈洪斌.脉冲压缩开关DBD研究[J].半导体技术,2011(8):595-597,608. |
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| 作者姓名： | 谭科民 杨勇 崔占东 马红梅 刘忠山 陈洪斌 |
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| 作者单位： | 中国电子科技集团公司第十三研究所,石家庄,050051;中国工程物理研究院应用电子学研究所,四川绵阳,621900 |
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| 基金项目： | 国家高技术研究发展计划(863计划)资助项目 |
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| 摘 要： | 延迟击穿器件(DBD)是一种新型的半导体导通式开关,它具有重复工作频率高、体积小、重量轻、稳定性好等优点。利用此种开关对基于半导体断路开关(sem iconductoropening switches,SOS)开关输出的高重复频率的脉冲波形进行压缩,可制作出高重复频率的超宽带脉冲源。介绍了DBD开关的基本工作原理和研制结果,给出了在相同测试条件下,与国外同类开关的测试结果对比波形,结果表明,研制的DBD开关和国外开关的指标基本相同,其中某些指标优于国外开关水平。
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| 关 键 词： | 延迟击穿器件 半导体断路开关 高重复频率超宽带源 延迟击穿 脉冲压缩 |
Study of Pulse Compressing DBD-Based Switch |
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| Tan Kemin,Yang Yong,Cui Zhandong,Ma Hongmei,Liu Zhongshan,Chen hongbin.Study of Pulse Compressing DBD-Based Switch[J].Semiconductor Technology,2011(8):595-597,608. |
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| Authors: | Tan Kemin Yang Yong Cui Zhandong Ma Hongmei Liu Zhongshan Chen hongbin |
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| Affiliation: | Tan Kemin1,Yang Yong1,Cui Zhandong1,Ma Hongmei1,Liu Zhongshan1,Chen hongbin2(1.The 13th Research Institute,CETC,Shijiazhuang 050051,China;2.Institute of Applied Electronics,CAEP,Si chuan Mianyang 621900,China) |
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| Abstract: | DBD is a new kind of semiconductor switch,which shows a excellent performance,such as higher repeat frequency,lighter weight,smaller size,and better stability.It could be to achieve high repeat frequency and super wide band source through compressing the output wave of SOS impulse power generator by using DBD switches.The principle of operation and research results of the DBD switches were introduced,and the results compared with the foreign similar switches under the same test condition were given.The results show that,the basic specifications of the develop DBD switch are same as foreign similar switches,and some specifications are better than foreign switching levels. |
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| Keywords: | delaged breakdown devices(DBD) semiconductor opening switches(SOS) high repeat frequency and super wide band source delayed breakdown pulse compression |
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