| 硅晶片化学机械抛光中的化学作用机理 |
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| 引用本文： | 陈志刚,陈杨,陈爱莲.硅晶片化学机械抛光中的化学作用机理[J].半导体技术,2006,31(2):112-114,126. |
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| 作者姓名： | 陈志刚 陈杨 陈爱莲 |
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| 作者单位： | 1. 江苏工业学院材料系,江苏,常州,213016
2. 江苏工业学院机械系,江苏,常州,213016 |
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| 基金项目： | 江苏省自然科学基金
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江苏省高技术研究发展计划项目 |
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| 摘 要： | 通过分析硅晶片化学机械抛光过程中软质层的形成及其对材料去除过程的影响,研究了使用纳米CeO2磨料进行化学机械抛光中的化学作用机理.分析表明,软质层是抛光液与硅晶片反应形成的一层覆盖在硅基体表面的腐蚀层,其硬度比基材小,厚度大约在几个纳米.软质层的存在一方面增大单个磨料所去除材料的体积,增加材料去除速率;另一方面减小了磨料嵌入硅晶片基体的深度,这对于实现塑性磨削,降低抛光表面粗糙度,都起着重要的作用.
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| 关 键 词： | 化学机械抛光 软质层 化学作用 硅晶片 化学机械抛光 化学作用机理 Silicon Wafer Chemical Mechanical Polishing Effect Mechanism 表面粗糙度 磨削 塑性 深度 基体 去除速率 体积 材料 存在 厚度 基材 硬度比 腐蚀层 体表面 |
| 文章编号： | 1003-353X（2006）02-0112-03 |
| 收稿时间： | 2005-05-05 |
| 修稿时间： | 2005-05-05 |
Chemical Effect Mechanism in Chemical Mechanical Polishing for Silicon Wafer |
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| CHEN Zhi-gang,CHEN Yang,CHEN Ai-lian.Chemical Effect Mechanism in Chemical Mechanical Polishing for Silicon Wafer[J].Semiconductor Technology,2006,31(2):112-114,126. |
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| Authors: | CHEN Zhi-gang CHEN Yang CHEN Ai-lian |
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| Affiliation: | 1. School of Material and Engineering; 2.School of Mechanical Engineering, Jiangsu Polytechnic University, Changzhou 213016,China |
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| Abstract: | By analyzing the formation of soft layer and its effect on the surface roughness and material removal rate in Si CMP, the chemical effect mechanism of nano CeO2 was studied. The soft layer was a reaction layer formed on the silicon surface; it was softer than the silicon substrate and its thickness was about several nanometers. The existence of the soft layer could increase the material volume removed by one particle and increase the material removal rate during CMP. At the same time the soft layer could decrease the cutting depth of the abrasive particle so as to realize ductile grinding. This contributed to decreasing the roughness of the polished surface and improving the polishing quality. |
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| Keywords: | CMP soft layer chemical effect |
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