| 高性能CMOS带隙基准电压源及电流源的设计 |
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| 引用本文： | 徐星,袁红辉,陈世军,刘强.高性能CMOS带隙基准电压源及电流源的设计[J].半导体技术,2011,36(3):229-233. |
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| 作者姓名： | 徐星 袁红辉 陈世军 刘强 |
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| 作者单位： | 中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海,200083 |
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| 基金项目： | 上海市科委国际科技合作项目资助 |
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| 摘 要： | 介绍了一种高性能CMOS带隙基准电压源及电流源电路,基准电压源使用两个二极管串联结构来减小运放失调影响结果的系数,同时采用大尺寸器件减小运放的失调;采用共源共栅电流镜提供偏置电流来减小沟道长度调制效应带来的影响;在此基准电压源的基础上,利用正温度系数电流与负温度系数电流求和补偿的方法,设计了一种基准电流源。使用CSMC公司0.5μm CMOS工艺模型,利用Spectre工具对其仿真,结果显示:电源电压为5 V,在-40～85℃的温度范围内,基准电压源温度系数为20.4×10-6/℃,直流电源抑制比为1.9 mV/V,电流源温度系数为27.3×10-6/℃,电源抑制比为57 dB。
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| 关 键 词： | CMOS 带隙基准 运算放大器 电源抑制比 温度系数 |
Design of Super Performance CMOS Bandgap Voltage Reference and Current Reference |
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| Xu Xing,Yuan Honghui,Chen Shijun,Liu Qiang.Design of Super Performance CMOS Bandgap Voltage Reference and Current Reference[J].Semiconductor Technology,2011,36(3):229-233. |
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| Authors: | Xu Xing Yuan Honghui Chen Shijun Liu Qiang |
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| Affiliation: | Xu Xing,Yuan Honghui,Chen Shijun,Liu Qiang (Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Instit ute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China) |
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| Abstract: | The super performance CMOS bandgap voltage reference and current reference were described.In order to reduce the influence of distortion voltage of ope rational amplifier,two-pn series-connection structure and large size devices were used.A cascode current mirror was used to produce the bias current,the errors resulted from the effect of the channel length modulation of PMOS were reduced.On the base of the voltage reference,a current reference was presented by adding a positive temperature coefficient curre... |
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| Keywords: | CMOS |
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