| 射频磁控溅射掺氮ZnO薄膜的制备与表征 |
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| 引用本文： | 朱慧群,丁瑞钦.射频磁控溅射掺氮ZnO薄膜的制备与表征[J].半导体技术,2006,31(7):515-519. |
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| 作者姓名： | 朱慧群 丁瑞钦 |
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| 作者单位： | 五邑大学,薄膜与纳米材料研究所,广东,江门,529020;五邑大学,薄膜与纳米材料研究所,广东,江门,529020 |
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| 基金项目： | 广东省自然科学基金
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广东省江门市科技计划 |
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| 摘 要： | 以ZnO为靶材,采用射频磁控溅射法,在衬底温度为450℃、混合气体压强为1.3Pa的条件下,在石英玻璃和抛光单晶硅衬底上沉积了一系列呈六角纤锌矿结构、沿(0002)晶面高度取向生长的ZnO薄膜.利用X射线衍射、四探针、原子力显微镜、吸收光谱和光致荧光光谱等实验分别对薄膜样品的晶体结构、表面形貌和光电特性进行了分析表征.结果表明,氮对ZnO薄膜的缺陷有明显的钝化作用,气体组分、溅射功率是影响ZnO薄膜沿C轴择优取向生长、结构特征和光电性质的重要因素.
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| 关 键 词： | 射频磁控溅射 ZnO薄膜 气体组分 氮钝化 |
| 文章编号： | 1003-353X(2006)07-0515-05 |
| 收稿时间： | 2006-03-01 |
| 修稿时间： | 2006年3月1日 |
Preparation and Characterization of Nitrogen Doped ZnO Films by RF Magnetron Sputtering |
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| ZHU Hui-qun,DING Rui-qin.Preparation and Characterization of Nitrogen Doped ZnO Films by RF Magnetron Sputtering[J].Semiconductor Technology,2006,31(7):515-519. |
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| Authors: | ZHU Hui-qun DING Rui-qin |
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| Affiliation: | Institute of Thin Films and Nonamaterials, Wuyi University, Jiangmen 529020 , China |
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| Abstract: | ZnO thin films, grown on SiO2 and Si substrates by radio frequency (RF) magnetron sputtering under substrate temperature of 450oC and chamber pressure of 1.3Pa, exhibited a high (0002) orientation and hexagonal wurtzite structure. ZnO films were characterized by X-ray diffraction (XRD), four-point probe, atomic force microscope (AFM) pattern, absorption and photoluminescence spectrum. Experimental results revealed that nitrogen passivation can improve the defects of ZnO films evidently, and the composition of sputtering gas and RF power are important factors to crystal structure, surface morphology and optoelectric properties. |
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| Keywords: | RF magnetron sputtering ZnO films composition of sputtering gas nitrogen passivation |
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