| 电磁脉冲对GaAs LNA损伤及其分析 |
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| 引用本文： | 李用兵,王海龙.电磁脉冲对GaAs LNA损伤及其分析[J].半导体技术,2008,33(10). |
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| 作者姓名： | 李用兵 王海龙 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,石家庄050051;中国电子科技集团公司,第二十九研究所,成都610036 |
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| 摘 要： | 介绍了电磁脉冲对GaAs低噪声放大器(LNA)损伤机理和损伤模式.利用特定电磁脉冲信号对其进行损伤,通过开帽内部目检、扫描电镜等失效手段和方法,针对该低噪声放大器在电磁脉冲实验中损伤机理及损伤模式进行了分析与讨论.实验表明,GaAs低噪声放大器的可靠性问题主要表现为有源器件、无源器件和环境因素等引入损伤退化,主要失效部位表现为有源器件,指出了对GaAs器件加固的一些措施,对器件设计者和使用者具有一定的参考意义.
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| 关 键 词： | 低噪声放大器 电磁脉冲 损伤试验 软损伤机理 |
Electrocmagnetic Pulse Damage on GaAs LNA and Its Analysis |
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| Li Yongbing,Wang Hailong.Electrocmagnetic Pulse Damage on GaAs LNA and Its Analysis[J].Semiconductor Technology,2008,33(10). |
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| Authors: | Li Yongbing Wang Hailong |
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| Affiliation: | Li Yongbing1,Wang Hailong2 (1.The 13th Research Institute,CETC,Shijiazhuang 050051,China,The 29th Research Institute,Chengdu 610036,China) |
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| Abstract: | The damage mechanisms and damage mode of electromagnetic pulse on GaAs LNA(low noise amplifier) were introduced.The LNA was damaged by special electromagnetic pulse single,some damage mechanisms and damage mode were analyzed and discussed through interior inspection after opening cap and SEM under electromagnetic pulse test conditions.The results show that the degradation and damage of GaAs LNA are related to active and passive parts and environments,mainly failure locates in active parts of GaAs LNA.Some r... |
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| Keywords: | low noise amplifer electromagnetic pulse damage experiment mechanism of soft-damage |
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