| 低温缓冲层对MBE生长ZnTe材料性能的改善 |
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| 引用本文： | 张家奇,赵杰,刘超,崔利杰,曾一平.低温缓冲层对MBE生长ZnTe材料性能的改善[J].半导体技术,2012,37(1):37-41. |
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| 作者姓名： | 张家奇 赵杰 刘超 崔利杰 曾一平 |
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| 作者单位： | 中国科学院半导体研究所材料科学中心,北京,100083;中国科学院半导体研究所材料科学中心,北京,100083;中国科学院半导体研究所材料科学中心,北京,100083;中国科学院半导体研究所材料科学中心,北京,100083;中国科学院半导体研究所材料科学中心,北京,100083 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 研究了低温缓冲层对在GaAs(001)衬底上用分子束外延(MBE)生长ZnTe薄膜晶体质量的影响。发现插入低温缓冲层后ZnTe的结晶质量、表面形貌和发光质量都得到了显著的提高,双晶X射线摇摆曲线(DCXRC)的ZnTe(004)衍射峰半峰宽(FWHM)从529 arcsec减小到421 arcsec,表面均方根(RMS)粗糙度从6.05 nm下降到3.93 nm。而作为对比,插入高温缓冲层并不能对ZnTe薄膜的质量起到改善作用。基本上实现了优化工艺的目标并为研制ZnTe基光电器件微结构材料奠定了很好的实验基础。
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| 关 键 词： | 碲化锌 异质外延 低温缓冲层 高温缓冲层 分子束外延 |
Performance Improvement of ZnTe Material by MBE with Low-Temperature Buffer Layers |
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| Zhang Jiaqi
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Zhao Jie
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Liu Chao
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Cui Lijie
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Zeng Yiping.Performance Improvement of ZnTe Material by MBE with Low-Temperature Buffer Layers[J].Semiconductor Technology,2012,37(1):37-41. |
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| Authors: | Zhang Jiaqi Zhao Jie Liu Chao Cui Lijie Zeng Yiping |
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| Affiliation: | (Material Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) |
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| Abstract: | The effects of ZnTe thin films grown on GaAs(001)substrates with low-temperature buffer layers by molecular beam epitaxy(MBE)were analyzed.It has a lot of improvement to crystalline quality,surface morphology and luminous quality of the ZnTe thin films after using low-temperature buffer layers.The full-width at half-maximum(FWHM) of double-crystal X-ray rocking curve(DCXRD)for ZnTe(004)reflection decreases from 529 arcsec(without buffer layers)to 421 arcsec(with low temperature buffer layers),and the root-mean-square(RMS)roughness diminishes from 6.05 nm to 3.93 nm.However,high crystal quality ZnTe heteroepitaxy cannot be achieved by inserting a thin buffer layer at high temperature.Optimization of ZnTe growth on GaAs(001)by MBE was basically achieved,and a good experimental foundation is laid for microstructure materials of ZnTe based optoelectronic devices. |
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| Keywords: | ZnTe heteroepitaxy low-temperature buffer layer high-temperature buffer layer molecular beam epitaxy(MBE) |
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