Si基薄膜体声波谐振器(FBAR)技术研究

介绍了目前国际上主流的薄膜体声波谐振器(FBAR)技术,分析了FBAR谐振器的结构设计和压电薄膜选取方案。依托Si基半导体工艺平台,采用牺牲层技术完成了空气腔的制作,利用磁控反应溅射技术制备的高质量(002)AlN薄膜作为压电材料,基于FBAR多层立体结构,实现了空气腔型FBAR谐振器的制作工艺,实际制作了FBAR谐振器样品。实测FBAR谐振器样品典型指标:Q值≥300,谐振频率为1.46 GHz,谐振频率覆盖L波段。测试结果验证了设计方案及工艺路径的正确性与可行性,为后续产品的研发提供了技术基础。

Study on Silicon-Based Film Bulk Acoustic Resonator (FBAR) Technology

The international mainstream film bulk acoustic resonator(FBAR) technology was introduced.The design of FBAR structure and the piezoelectric film selection scheme were analyzed.Relied on silicon-based semiconductor technology platform,the air cavity was obtained by the methodology of sacrifice layer.The high quality AlN thin film with(002)oriented as a piezoelectric material was achieved by magnetron reactive sputtering.Based on the FBAR three-dimensional multi-layer structure,the production process of the air cavity type FBAR resonator was realized,and the actual FBAR samples was made.The typical test results show a Q-Factor larger than 300 and a resonance frequency of 1.46 GHz.It shows that the design scheme and process technology is correct and feasible,and the technology provides technical foundation for the development of the follow-up product,