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半导体材料研究的新进展
引用本文:王占国.半导体材料研究的新进展[J].半导体技术,2002,27(3):8-12,14.
作者姓名:王占国
作者单位:中国科学院半导体研究所,半导体材料科学实验室,北京,100083
基金项目:国家重点基础研究发展计划(973计划);G2000068300;
摘    要:首先对作为现代信息社会的核心和基础的半导体材料在国民经济建设、社会可持续发展以及国家安全中的战略地位和作用进行了分析,进而介绍几种重要半导体材料如,硅材料、GaAs和InP单晶材料、半导体超晶格和量子阱材料、一维量子线、零维量子点半导体微结构材料、宽带隙半导体材料、光学微腔和光子晶体材料、量子比特构造和量子计算机用材料等目前达到的水平和器件应用概况及其发展趋势作了概述.最后,提出了发展我国半导体材料的建议.本文未涉及II-VI族宽禁带与II-VI族窄禁带红外半导体材料、高效太阳电池材料Cu(In,Ga)Se.CuIn(Se,S)等以及发展迅速的有机半导体材料等.

关 键 词:半导体材料  量子线  量子点材料  光子晶体
文章编号:1003-353X(2002)03-0008-05

New progress of studies on semiconductor materials
WANG Zhan-guo.New progress of studies on semiconductor materials[J].Semiconductor Technology,2002,27(3):8-12,14.
Authors:WANG Zhan-guo
Abstract:The strategic position and important role of semiconductor materials, as a core andfoundation of the information society, for development of national economic, national safetyand society progress are analyzed first in this paper. Then the present status and futureprospects of studies on semiconductor materials such as silicon crystals, III-V compoundsemiconductor materials and GaAs,InP and silicon based superlattice and quantum wellmaterials, quantum wires and quantum dots materials, microcavity and photonic crystals, materi-als for quantum computation and wide band gap materials as well are briefly discussed.Finally the suggestions for the development of semiconductor materials in our country areproposed. II-VI narrow and wide band gap materials, solar cell materials and organic materials foroptoelectronic devices etc. are not included in this article.
Keywords:semiconductor materials  quantum wire  quantum dot materials  photonicmaterials  
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