| S波段10 W SiC MESFET的研制 |
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| 引用本文： | 潘宏菽,李亮,陈昊,齐国虎,霍玉柱,杨霏,冯震,蔡树军.S波段10 W SiC MESFET的研制[J].半导体技术,2007,32(11):940-943. |
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| 作者姓名： | 潘宏菽 李亮 陈昊 齐国虎 霍玉柱 杨霏 冯震 蔡树军 |
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| 作者单位： | 河北半导体研究所,石家庄,050051 |
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| 摘 要： | 采用在75 mm 4H-SiC半绝缘衬底上实现的国产SiC MESFET外延材料进行器件研制,在该器件的具体研制工艺中利用感应耦合等离子体干法腐蚀,牺牲层氧化等工艺技术,研制出2 GHz工作频率下连续波输出功率大于10 W、功率增益大于9 dB、功率附加效率不低于35%的MESFET功率样管,该器件的特征频率达6.7 GHz,最高振荡频率达25 GHz.对芯片加工工艺和器件的测试技术进行了分析,给出了相应的工艺和测试结果.
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| 关 键 词： | 碳化硅 微波 功率器件 金属-半导体场效应晶体管 |
| 文章编号： | 1003-353X（2007）11-0940-04 |
| 修稿时间： | 2007-06-21 |
Development of S-Band SiC MESFET with 10 W Output |
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| PAN Hong-shu,LI Liang,CHEN Hao,QI Guo-hu,HUO Yu-zhu,YANG Fei,FENG Zhen,CAI Shu-jun.Development of S-Band SiC MESFET with 10 W Output[J].Semiconductor Technology,2007,32(11):940-943. |
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| Authors: | PAN Hong-shu LI Liang CHEN Hao QI Guo-hu HUO Yu-zhu YANG Fei FENG Zhen CAI Shu-jun |
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| Affiliation: | Hebei Semiconductor Research lnsthute, Shijiazhuang 050051, China |
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| Abstract: | The SiC MESFET was developed with 10W of output power,power gain over 9 dB and 35% power added efficiency under continuous wave at 2 GHz.The 4H-SiC epitaxial wafer was prepared on 75 mm SiC semi-insulated substrate made by ourselves.The devices with fT=6.7 GHz and fmax=25 GHz were fabricated using inductively coupled plasma etching,sacrificial oxide treatment and other conventional tools.The results of chip process and the device test were given. |
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| Keywords: | SiC microwave power device MESFET |
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