纳米柱InGaN/GaN多量子阱的干法刻蚀制备技术

纳米柱GaN基多量子阱(MQW)拥有量子尺寸效应以及应变释放等特性,对于提高GaN基发光二极管(LED)的发光效率具有重要意义.采用快速热退火(RTA)形成的自组装Ni纳米颗粒作为刻蚀掩膜,利用电感耦合等离子体反应离子刻蚀(ICP-RIE)制备纳米柱InGaN/GaN MQW.通过改变RTA温度发现在800℃以上才能有效形成Ni纳米颗粒掩膜.不同的ICP和射频(RF)功率条件下制备的纳米柱MQW光致发光强度相比于相同结构的平面MQW会发生显著变化.通过优化ICP-RIE的刻蚀条件,可以获得发光强度显著提高的纳米柱MQW结构.同时,纳米柱MQW中压电极化场的减弱会形成光致发光峰位蓝移.

Preparation Technology of Dry Etching for Nanorod InGaN/GaN Multiple Quantum Wells

Nanorod GaN-based multiple quantum wells (MQWs) have quantum size effect and strain relief characteristics,which are important for improving the luminous efficiency of GaN-based lightemitting diodes (LEDs).Self-assembled Ni nanoparticles formed by rapid thermal annealing (RTA) were used as an etching mask to fabricate nanorod InGaN/GaN MQWs by inductively coupled plasma reaction ion etching (ICP-RIE).By changing the RTA temperature,it is found that the Ni nanoparticle mask can be effectively formed above 800 ℃.The photoluminescence intensities of the nanorod MQWs fabricated under different ICP and radio frequency (RF) power conditions change obviously compared with that of the planar MQWs with the same structure.By optimizing ICP-RIE etching conditions,the nanorod MQW structures with a significant improved luminous intensity can be obtained.Simultaneously,the weakening of the piezoelectric field in the nanorod MQWs may cause the blue shift of the photoluminescence peak.