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掺钛氧化锌透明导电薄膜的制备及特性研究
引用本文:刘汉法,张化福,袁玉珍,袁长坤.掺钛氧化锌透明导电薄膜的制备及特性研究[J].半导体技术,2009,34(11).
作者姓名:刘汉法  张化福  袁玉珍  袁长坤
作者单位:山东理工大学,理学院,山东,淄博,255049;山东理工大学,理学院,山东,淄博,255049;山东理工大学,理学院,山东,淄博,255049;山东理工大学,理学院,山东,淄博,255049
基金项目:山东理工大学功能材料创新团队支持计划项目 
摘    要:利用直流磁控溅射法在室温水冷玻璃衬底上成功地制备出了掺钛氧化锌(ZnO:Ti)透明导电薄膜.研究了靶衬间距对ZnO:Ti薄膜结构、形貌和光电性能的影响.研究结果表明,靶衬间距对ZnO:Ti薄膜的结构和电阻率有显著影响.X射线衍射(XRD)表明,ZnO:Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向.在靶衬间距为4.6 cm时,实验获得的ZnO:Ti薄膜电阻率具有最小值4.18×10-4Ω·cm.实验制备的ZnO:Ti薄膜具有良好的附着性能,可见光区平均透过率超过92%.ZnO:Ti薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极.

关 键 词:掺钛氧化锌  透明导电薄膜  磁控溅射  靶衬间距

Deposition and Properties of Transparent Conducting Titanium-Doped Zinc Oxide Films
Liu Hanfa,Zhang Huafu,Yuan Yuzhen,Yuan Changkun.Deposition and Properties of Transparent Conducting Titanium-Doped Zinc Oxide Films[J].Semiconductor Technology,2009,34(11).
Authors:Liu Hanfa  Zhang Huafu  Yuan Yuzhen  Yuan Changkun
Affiliation:Liu Hanfa,Zhang Huafu,Yuan Yuzhen,Yuan Changkun(School of Science,Sh,ong University of Technology,Zibo 255049,China)
Abstract:Transparent conducting ZnO:Ti films with high transparency and relatively low resistivity were successfully prepared by DC frequency magnetron sputtering at room temperature. The effects of the distance between target and substrate on the structures, morphologies and optic-electronic properties of ZnO:Ti films were investigated. The experimental results show that the distance between target and substrate is an important factor to the crystal structure and optic-electronic properties of ZnO:Ti films. XRD studies reveal that all the films are polyerystalline with a hexagonal structure and a preferred orientation along the e-axis. The lowest resistivity achieved is 4.18 × 10~(-4)Ω·cm at 4.6 cm distance between target and substrate.All the films present a high transmittance of above 92% in the visible range. ZnO: Ti films with high transparency and relatively low resistivity deposited at room temperature will be used as transparent electrode in thin film solar cells and liquid crystal display.
Keywords:ZnO : Ti  transparent conducting films  magnetron sputtering  substrate to target distance
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