| GaAs垂直结构PIN二极管限幅器 |
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| 引用本文： | 王静辉,魏洪涛,张力江.GaAs垂直结构PIN二极管限幅器[J].半导体技术,2008,33(9). |
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| 作者姓名： | 王静辉 魏洪涛 张力江 |
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| 作者单位： | 河北半导体研究所,石家庄,050051 |
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| 摘 要： | 基于垂直结构GaAs PIN二极管的工艺技术开发,在GaAs PHEMT生产线上开发研制了GaAs PIN二极管限幅器单片集成电路.针对不同频段的单片电路采用了不同的材料结构参数设计.工艺中采用先进的深挖槽技术,严格控制横向钻蚀问题,制作出了限幅水平40 mW、最大承受功率5 W的多个频段GaAs限幅器单片电路,成品率达到95%以上.GaAs垂直结构PIN二极管工艺对GaAs PIN二极管大功率开关、限幅器等GaAs MMIC的发展具有重大意义.
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| 关 键 词： | 垂直结构 PIN 二极管 限幅器 深挖槽 |
GaAs Vertical Structure PIN Diode Limiter |
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| Wang Jinghui,Wei Hongtao,Zhang Lijiang.GaAs Vertical Structure PIN Diode Limiter[J].Semiconductor Technology,2008,33(9). |
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| Authors: | Wang Jinghui Wei Hongtao Zhang Lijiang |
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| Affiliation: | Wang Jinghui,Wei Hongtao,Zhang Lijiang(HeBei Semiconductor Research Institute,Shijiazhuang 050051,China) |
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| Abstract: | Based on the process development of GaAs PIN vertical structure,a new GaAs PIN diode limiter in GaAs PHEMT production line was developed.Different material structure parameter designs were adopted for different frequency bands MMICs.A new recess etches was adopted.It was effectively to control undercut problems.Many GaAs PIN limiters with RF leakage 40 mW and maximum power handling 5 W were fabricated.It has an average RF yield of 95%.It is important on GaAs vertical structure PIN diode for high power switc... |
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| Keywords: | vertical structure PIN diode limiter recess etch |
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