| 新型CMP用二氧化硅研磨料 |
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| 引用本文： | 王娟,刘玉岭,张建新.新型CMP用二氧化硅研磨料[J].半导体技术,2005,30(8):25-26,33. |
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| 作者姓名： | 王娟 刘玉岭 张建新 |
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| 作者单位： | 河北工业大学微电子研究所,天津,300130;河北工业大学微电子研究所,天津,300130;河北工业大学微电子研究所,天津,300130 |
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| 摘 要： | 介绍化学机械抛光技术的重要性,找出影响其性哪料种类做概要论述,找出其优缺点.并在前人研究的基础上研制出更具优势的抛光研磨料,详细介绍其特点及使用条件,另对它的使用效果进行了简要说明.
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| 关 键 词： | 化学机械抛光 二氧化硅 抛光液 |
| 文章编号： | 1003-353X(2005)08-0025-02 |
Novel SiO2 Slurry in CMP |
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| WANG Juan,LIU Yu-ling,ZHANG Jian-xin.Novel SiO2 Slurry in CMP[J].Semiconductor Technology,2005,30(8):25-26,33. |
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| Authors: | WANG Juan LIU Yu-ling ZHANG Jian-xin |
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| Abstract: | The importance of chemical mechanical polishing( CMP)was introduced. The key factor influencing its property was found,that is, slurry. The class of slurry was summarized. The preponderant slurry was prepared on the base of other researchers. The peculiarity and using condi- tion were recommended. On the other hand, the effect of the slurry was showed briefly. |
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| Keywords: | CMP SiO2 slurry |
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