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Samarium as a Schottky barrier on p-type-silicon |
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| Authors: | R Nipoti J Garrido S Guerri |
| Affiliation: | Consiglio Nazionale delle Ricerche, Istituto LAMEL, Via Castagnoli 1, 40126, Bologna, Italy |
| Abstract: | The electrical and structural characteristics of the samarium-silicon contact have been investigated after thermal treatments up to 300°C for 30 min in vacuum. Good Schottky barriers have been realized for treatments up to 200°C obtaining a barrier height of 0.70 eV. The electrical barrier properties degrade at temperatures above 250°C, where a continuous Layer of SmSi1.7 is formed. |
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