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Resonant tunneling through rare earth arsenide, semimetal quantum wells |
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| Authors: | D E Brehmer Kai Zhang Ch J Schwarz S -P Chau S J Allen J P Ibbetson J P Zhang A G Petukhov C J Palmstrm B Wilkens |
| Affiliation: | a Physics Department and Quantum Institute, University of California, Santa Barbara, CA 93106, U.S.A. b Materials Department, University of California, Santa Barbara, CA 93106, U.S.A. c Physics Department, South Dakota School of Mines and Technology, Rapid City, SD 57701-3995, U.S.A. d Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, U.S.A. e Center for Solid State Science, Arizona State University, Tempe, AZ 85287, U.S.A. |
| Abstract: | Resonant tunneling is observed in double barrier resonant tunneling diodes (RTDs) with semi-metallic ErAs quantum wells. Magnetic field dependence distinguishes two different resonant channels. From the thickness dependence of the voltage for resonant tunneling the dispersion of the channels is found to be hole-like. The dispersion agrees well with the theory that identifies the two channels with mj = ±1/2 and mj = ±3/2, hole states. |
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