Interface and layer thickness dependence of the effective mass in InAs/GaSb superlattices studied by high field cyclotron resonance

The effective mass has been studied in a series of semiconducting and semimetallic InAs/GaSb superlattices as a function of superlattice period and band gap. The mass is found to be determined almost entirely by the superlattice period, and is relatively insensitive to both the ratio of the InAs to GaSb thickness, and the structure of the interface layer, which was grown as both a monolayer of InSb and GaAs. Using pulsed magnetic fields of up to 180 T it was possible to observe spin-split cyclotron resonance at room temperature for all samples studied. On cooling the spin-splitting was found to be temperature dependent. This is attributed to the importance of electron-electron interactions which couple the two spin transitions as observed recently in high purity GaAs/GaAlAs heterojunctions at low temperatures.