| 氧化锌薄膜体声波谐振器的研制 |
| |
| 引用本文： | 汤亮,郝震宏,乔东海,汪承灏.氧化锌薄膜体声波谐振器的研制[J].微细加工技术,2008(2). |
| |
| 作者姓名： | 汤亮 郝震宏 乔东海 汪承灏 |
| |
| 作者单位： | 中国科学院声学研究所,声学微机电实验室,北京,100080 |
| |
| 摘 要： | 介绍了一种薄膜体声波谐振器和它的制备流程.该谐振器采用氧化锌压电薄膜作为压电材料,通过从硅片背部体刻蚀硅衬底的方法得到谐振器的支持层.为了避免残余应力引起的支持层起皱现象,采用氮化硅/二氧化硅/氮化硅复合膜作为支持层.采用直流磁控溅射的方法制备氧化锌压电薄膜,X射线衍射结果显示,氧化锌压电薄膜C轴择优取向明显,衍射峰半高宽为0.227 3°,显示出较好的结晶质量;扫描电镜观察到氧化锌垂直于薄膜表面的柱形晶粒结构,薄膜表面平整、致密.采用HP8753D射频网络分析仪对该薄膜体声波谐振器样品进行了测试,结果表明,谐振器具有明显的厚度伸缩振动模式,其基频在750 MHz左右,二次谐频在1.5 GHz左右.进一步提高氧化锌压电薄膜的性能,该谐振器可用于射频振荡源和射频前端滤波器中.
|
| 关 键 词： | 薄膜体声波谐振器 振荡器 滤波器 双工器 射频微机电系统 |
Development of A Film Bulk Acoustic Resonator Based on ZnO |
| |
| TANG Liang,HAO Zhen-hong,QIAO Dong-hai,WANG Cheng-hao.Development of A Film Bulk Acoustic Resonator Based on ZnO[J].Microfabrication Technology,2008(2). |
| |
| Authors: | TANG Liang HAO Zhen-hong QIAO Dong-hai WANG Cheng-hao |
| |
| Affiliation: | TANG Liang,HAO Zhen-hong,QIAO Dong-hai,WANG Cheng-hao(MEMS Laboratory of the Institute of Acoustics,Chinese Academy of Sciences,Beijing 100080,China) |
| |
| Abstract: | A film bulk acoustic resonator(FBAR) and its fabrication process were presented.Sputtered ZnO thin film was used as the resonator's piezoelectric layer,and its supporting membrane was formed by bulk-etching the silicon substrate from the backside.In order to avoid the wrinkling of the released membrane caused by the internal residual stress,SiNx/SiO2/SiNx multi-layer support structure was introduced.The piezoelectric ZnO thin film was deposited by DC reactive magnetron sputtering.The X-ray diffraction measu... |
| |
| Keywords: | FBAR oscillator filter duplexer RF MEMS |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
